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APTM100H35FT
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 1000V RDSon = 350m max @ Tj = 25C ID = 22A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1 S1 Q2 O UT1 O UT2 Q4
G3 S3
G2 S2 NT C1 0/VBUS NT C2
G4 S4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM100H35FT- Rev 0
July, 2004
Tc = 25C
Max ratings 1000 22 17 88 30 350 390 25 50 3000
Unit V A V m W A
APTM100H35FT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A Min 1000
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Typ
Max 250 1000 350 5 100
Unit V A m V nA
VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = 30V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 22A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 22A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 22A, R G = 5
Min
Typ 5.2 0.88 0.16 186 24 122 18 12 155 40 900 623 1423 779
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 22A IS = - 22A VR = 500V diS/dt = 100A/s IS = - 22A VR = 500V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 3.6 9.72
Max 22 17 1.3 18 320 650
Unit A V V/ns ns C
APT website - http://www.advancedpower.com
2-6
APTM100H35FT- Rev 0
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 22A di/dt 700A/s VR VDSS Tj 150C
July, 2004
APTM100H35FT
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.32 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
APT website - http://www.advancedpower.com
3-6
APTM100H35FT- Rev 0
July, 2004
APTM100H35FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 0.5
0.1 0.05 0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 60
VGS=15, 10&8V
Transfert Characteristics 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 30 0 1 2 3 4 5 TJ=25C TJ=125C TJ=-55C 6 7 8 9
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
50 40 30 20 10 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
25
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 11A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 25 20 15 10 5 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V
VGS=20V
10
20
30
40
50
60
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (C)
July, 2004
APT website - http://www.advancedpower.com
4-6
APTM100H35FT- Rev 0
APTM100H35FT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC)
July, 2004
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=11A
100
limited by RDSon 100s
10
1ms
Single pulse TJ=150C 1 1
10ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage I D=22A TJ=25C
VDS=200V VDS=500V V DS =800V
10000
Ciss
1000
Coss
Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM100H35FT- Rev 0
APTM100H35FT
Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 tr and tf (ns) 120 100 80 60 40 20 0 0 10 20 30 40 50 ID, Drain Current (A) Switching Energy vs Current
V DS=670V RG=5 T J=125C L=100H
Rise and Fall times vs Current 80 t d(off) 70 60 50 40 30 20 10 0 0 10 20 30 40 I D, Drain Current (A) 50 tr
VDS=670V RG=5 TJ=125C L=100H
tf
td(on)
Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 Eon
VDS=670V ID=22A TJ=125C L=100H
2.5
Switching Energy (mJ)
2 1.5 1 0.5 0 0
V DS=670V RG=5 T J=125C L=100H
Eon
Eoff
E off
10
20
30
40
50
ID, Drain Current (A) Operating Frequency vs Drain Current
ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
Frequency (kHz)
250 225 200 175 150 125 100 75 50 25 0 5
ZCS
100 TJ=150C 10 TJ=25C
VDS=670V D=50% RG=5 T J=125C T C=75C
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2004
8
10 13 15 18 ID, Drain Current (A)
20
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM100H35FT- Rev 0
APT reserves the right to change, without notice, the specifications and information contained herein

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